Efficient near-infrared perovskite light-emitting diodes with controlled charge transport layer

Metal halide perovskite has the advantages of facile manufacture, high color purity and good spectral stability, which has a broad application prospect in light-emitting diodes (LEDs). Balanced charge transportation and recombination is vital for efficient perovskite light-emitting diodes (PeLEDs). In this work, we applied ZnO films with different thickness as electron transport layer (ETL) in near-infrared PeLEDs to modulate electron transportation. With controlled ZnO films, the external quantum efficiency (EQE) of PeLEDs is improved from 3.81% to 12.24%. The improvements provide a broad research prospect for efficient PeLEDs.