材料科学
铁电性
凝聚态物理
自旋电子学
铁磁性
位错
异质结
偶极子
扫描透射电子显微镜
透射电子显微镜
光电子学
纳米技术
电介质
物理
复合材料
量子力学
作者
Xiaomei Li,Bo Han,Ruixue Zhu,Ruochen Shi,Mei Wu,Yuanwei Sun,Yuehui Li,Bingyao Liu,Lifen Wang,Jingmin Zhang,Congbing Tan,Peng Gao,Xuedong Bai
标识
DOI:10.1073/pnas.2213650120
摘要
Misfit dislocations at a heteroepitaxial interface produce huge strain and, thus, have a significant impact on the properties of the interface. Here, we use scanning transmission electron microscopy to demonstrate a quantitative unit-cell-by-unit-cell mapping of the lattice parameters and octahedral rotations around misfit dislocations at the BiFeO 3 /SrRuO 3 interface. We find that huge strain field is achieved near dislocations, i.e., above 5% within the first three unit cells of the core, which is typically larger than that achieved from the regular epitaxy thin-film approach, thus significantly altering the magnitude and direction of the local ferroelectric dipole in BiFeO 3 and magnetic moments in SrRuO 3 near the interface. The strain field and, thus, the structural distortion can be further tuned by the dislocation type. Our atomic-scale study helps us to understand the effects of dislocations in this ferroelectricity/ferromagnetism heterostructure. Such defect engineering allows us to tune the local ferroelectric and ferromagnetic order parameters and the interface electromagnetic coupling, providing new opportunities to design nanosized electronic and spintronic devices.
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