光电探测器
光电流
异质结
光电子学
材料科学
佩多:嘘
响应度
载流子
纳米技术
图层(电子)
作者
Zhe Li,Jiaqi Li,Shaojie Li,Yuan Yao,Ainong Chen,Hwa‐Lung Yu,S. Wang,Jie Ding,Huajing Fang
标识
DOI:10.1021/acs.jpclett.4c00148
摘要
The organic-inorganic hybrid heterojunction is introduced for the first time to break through the performance bottleneck of BiVO4-based photodetectors. Through a facile solution process, a p-n heterojunction is established at the BiVO4/PEDOT:PSS interface, and the built-in electric field is designed to separate photogenerated charge carriers. The hybrid heterojunction outputs a significantly increased photocurrent, which is 24 000 times larger than that of the bare BiVO4 thin film. The photodetector shows a satisfactory performance with a responsivity (R) and specific detectivity (D*) of 107.8 mA/W and 4.13 × 1010 Jones at 482 nm illumination. In addition to the fast response speed (100 ms), the device also exhibits an impressive long-term stability with a negligible attenuation in photocurrent after more than 700 cycles. This work provides a novel strategy to suppress carrier recombination of BiVO4, and the coupling of metal oxides and organic semiconductors opens up a new avenue for fabricating high-performance photodetectors.
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