A 700 GHz Integrated Signal Source Based on 130 nm InP HBT Technology

A 700 GHz integrated signal source has been developed in this work based on a 130 nm InP heterojunction bipolar transistor technology. The circuit consists of a differential 350 GHz oscillator integrated with a frequency doubler. For the oscillator, the common-base cross-coupled topology was employed, while balanced common-emitter structure was adopted for the frequency doubler. The fabricated signal source exhibited a measured output frequency around 700 GHz, with a tight frequency variation over oscillator bias current change (702.3–698.8 GHz). The circuit also showed a measured peak output power of −11.8 dBm and dc-to-RF efficiency at peak output power of 0.09%. The phase noise was measured to be −73.8 dBc/Hz at 10 MHz offset frequency. The total dc power dissipation was 74.4 mW.