Optimizing ZnO–Quantum Dot Interface with Thiol as Ligand Modification for High‐Performance Quantum Dot Light‐Emitting Diodes

SmallEarly View 2307298 Research Article Optimizing ZnO–Quantum Dot Interface with Thiol as Ligand Modification for High-Performance Quantum Dot Light-Emitting Diodes Siqi Jia, Siqi Jia orcid.org/0000-0001-6439-457X Institute of Nanoscience and Applications, and Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055 China Institute of Advanced Displays and Imaging, Henan Academy of Sciences, Zhengzhou, 450046 China Peng Cheng Laboratory, Shenzhen, 518038 ChinaSearch for more papers by this authorMenglei Hu, Menglei Hu orcid.org/0000-0001-9183-4382 Institute of Nanoscience and Applications, and Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055 China Department of Electrical and Computer Engineering, University of British Columbia, Vancouver, BC, V6T 1Z4 CanadaSearch for more papers by this authorMi Gu, Mi Gu Institute of Nanoscience and Applications, and Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055 ChinaSearch for more papers by this authorJingrui Ma, Jingrui Ma Institute of Nanoscience and Applications, and Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055 ChinaSearch for more papers by this authorDepeng Li, Depeng Li Institute of Nanoscience and Applications, and Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055 ChinaSearch for more papers by this authorGuohong Xiang, Guohong Xiang Institute of Nanoscience and Applications, and Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055 ChinaSearch for more papers by this authorPai Liu, Pai Liu Institute of Nanoscience and Applications, and Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055 China Shenzhen Key Laboratory of Deep Subwavelength Scale Photonics, Southern University of Science and Technology, Shenzhen, 518055 ChinaSearch for more papers by this authorKai Wang, Kai Wang Institute of Nanoscience and Applications, and Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055 ChinaSearch for more papers by this authorPeyman Servati, Peyman Servati Department of Electrical and Computer Engineering, University of British Columbia, Vancouver, BC, V6T 1Z4 CanadaSearch for more papers by this authorWei Kun Ge, Wei Kun Ge Institute of Nanoscience and Applications, and Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055 ChinaSearch for more papers by this authorXiao Wei Sun, Corresponding Author Xiao Wei Sun [email protected] orcid.org/0000-0002-2840-1880 Institute of Nanoscience and Applications, and Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055 China E-mail: [email protected]Search for more papers by this author Siqi Jia, Siqi Jia orcid.org/0000-0001-6439-457X Institute of Nanoscience and Applications, and Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055 China Institute of Advanced Displays and Imaging, Henan Academy of Sciences, Zhengzhou, 450046 China Peng Cheng Laboratory, Shenzhen, 518038 ChinaSearch for more papers by this authorMenglei Hu, Menglei Hu orcid.org/0000-0001-9183-4382 Institute of Nanoscience and Applications, and Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055 China Department of Electrical and Computer Engineering, University of British Columbia, Vancouver, BC, V6T 1Z4 CanadaSearch for more papers by this authorMi Gu, Mi Gu Institute of Nanoscience and Applications, and Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055 ChinaSearch for more papers by this authorJingrui Ma, Jingrui Ma Institute of Nanoscience and Applications, and Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055 ChinaSearch for more papers by this authorDepeng Li, Depeng Li Institute of Nanoscience and Applications, and Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055 ChinaSearch for more papers by this authorGuohong Xiang, Guohong Xiang Institute of Nanoscience and Applications, and Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055 ChinaSearch for more papers by this authorPai Liu, Pai Liu Institute of Nanoscience and Applications, and Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055 China Shenzhen Key Laboratory of Deep Subwavelength Scale Photonics, Southern University of Science and Technology, Shenzhen, 518055 ChinaSearch for more papers by this authorKai Wang, Kai Wang Institute of Nanoscience and Applications, and Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055 ChinaSearch for more papers by this authorPeyman Servati, Peyman Servati Department of Electrical and Computer Engineering, University of British Columbia, Vancouver, BC, V6T 1Z4 CanadaSearch for more papers by this authorWei Kun Ge, Wei Kun Ge Institute of Nanoscience and Applications, and Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055 ChinaSearch for more papers by this authorXiao Wei Sun, Corresponding Author Xiao Wei Sun [email protected] orcid.org/0000-0002-2840-1880 Institute of Nanoscience and Applications, and Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055 China E-mail: [email protected]Search for more papers by this author First published: 16 November 2023 https://doi.org/10.1002/smll.202307298Read the full textAboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onEmailFacebookTwitterLinkedInRedditWechat Abstract As the electron transport layer in quantum dot light-emitting diodes (QLEDs), ZnO suffers from excessive electrons that lead to luminescence quenching of the quantum dots (QDs) and charge-imbalance in QLEDs. Therefore, the interplay between ZnO and QDs requires an in-depth understanding. In this study, DFT and COSMOSL simulations are employed to investigate the effect of sulfur atoms on ZnO. Based on the simulations, thiol ligands (specifically 2-hydroxy-1-ethanethiol) to modify the ZnO nanocrystals are adopted. This modification alleviates the excess electrons without causing any additional issues in the charge injection in QLEDs. This modification strategy proves to be effective in improving the performance of red-emitting QLEDs, achieving an external quantum efficiency of over 23% and a remarkably long lifetime T95 of >12 000 h at 1000 cd m−2. Importantly, the relationship between ZnO layers with different electronic properties and their effect on the adjacent QDs through a single QD measurement is investigated. These findings show that the ZnO surface defects and electronic properties can significantly impact the device performance, highlighting the importance of optimizing the ZnO–QD interface, and showcasing a promising ligand strategy for the development of highly efficient QLEDs. Conflict of Interest The authors declare no conflict of interest. Open Research Data Availability Statement The data that support the findings of this study are available in the supplementary material of this article. Supporting Information Filename Description smll202307298-sup-0001-SuppMat.pdf699.8 KB Supporting Information Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. 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