High-performance photodetection based on black arsenic utilizing the photoconductive effect

Two-dimensional materials have gained considerable attention owing to their exceptional optoelectronic properties. Among these, black phosphorus (BP) stands out for its tunable bandgap and high carrier mobility. However, its application is limited by its instability in the ambient condition. The emergence of black arsenic (b-As), which offers good environmental stability, is a promising 2D material candidate for black phosphorus, exhibiting tremendous potential in optoelectronic properties. Here, we demonstrate a high-performance b-As photodetector based on the dominance of the photoconductive effect, achieving a broadband spectral range from 520 nm to 1550 nm. This self-powered photodetector exhibits a rapid photoresponse speed, with impressive rise and fall times of 118 μ s and 115 μ s, respectively. Furthermore, characterized by a high responsivity of 1.826 A·W −1 and outstanding external quantum efficiency of 436%, the photodetector demonstrates its potential in IR optical communication and imaging capability. Our study introduces a novel photodetector material with broadband detection, fast photoresponse, high responsivity, and versatility, thereby providing a competitive alternative for the development of advanced optoelectronic devices.