当前拥挤
单层
缩放比例
晶体管
场效应晶体管
材料科学
光电子学
硅
半导体
MOSFET
纳米技术
纳米尺度
静电学
接触电阻
兴奋剂
电流(流体)
电气工程
化学
电压
图层(电子)
工程类
几何学
数学
物理化学
作者
Thomas F. Schranghamer,Najam U Sakib,Muhtasim Ul Karim Sadaf,Shiva Subbulakshmi Radhakrishnan,Rahul Pendurthi,Ama D. Agyapong,Sergei Stepanoff,Riccardo Torsi,Chen Chen,Joan M. Redwing,Joshua A. Robinson,Douglas E. Wolfe,Suzanne E. Mohney,Saptarshi Das
出处
期刊:Nano Letters
[American Chemical Society]
日期:2023-04-14
卷期号:23 (8): 3426-3434
被引量:7
标识
DOI:10.1021/acs.nanolett.3c00466
摘要
Two-dimensional (2D) semiconductors possess promise for the development of field-effect transistors (FETs) at the ultimate scaling limit due to their strong gate electrostatics. However, proper FET scaling requires reduction of both channel length (LCH) and contact length (LC), the latter of which has remained a challenge due to increased current crowding at the nanoscale. Here, we investigate Au contacts to monolayer MoS2 FETs with LCH down to 100 nm and LC down to 20 nm to evaluate the impact of contact scaling on FET performance. Au contacts are found to display a ∼2.5× reduction in the ON-current, from 519 to 206 μA/μm, when LC is scaled from 300 to 20 nm. It is our belief that this study is warranted to ensure an accurate representation of contact effects at and beyond the technology nodes currently occupied by silicon.
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