XNOR门
计算机科学
感测放大器
与非门
瓶颈
逻辑门
静态随机存取存储器
通流晶体管逻辑
计算机硬件
并行计算
晶体管
嵌入式系统
算法
半导体存储器
工程类
电气工程
电压
作者
Yen‐Jen Chang,Shih-Hsiang Chen
标识
DOI:10.1109/jetcas.2023.3243434
摘要
The widely used Von Neumann architecture must move data between memory and the computation unit when performing operations, which causes a performance bottleneck. In-memory computing is an effective way to reduce the bottleneck; therefore, we design an in-memory Boolean computing architecture based on static random access memory (SRAM). We also propose a new multi-logic sense amplifier (MLSA) design, an improvement over conventional sense amplifiers that only perform a single logical operation, either NOR/OR or NAND/AND. Our design can generate multiple logical outputs, including OR/NOR, AND/NAND, and XOR/XNOR, with a lower compute delay, lower power consumption, and less transistor count. In the experimental results, the proposed MLSA design reduces the NAND, AND, and XNOR delay by 62%, 39%, and 30%, and it also decreases the static power consumption by 40% and dynamic power consumption in computing operations by 22% compared to the conventional sensing method.
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