Ferroelectric Field Effect Transistors (FeFETs): Advancements, challenges and exciting prospects for next generation Non-Volatile Memory (NVM) applications

Data intensive applications such as AI (Artificial Intelligence) and IoT (Internet of Things) demand high performance and highly reliable non-volatile memories (NVM). FeFET offers several exciting features such as faster write/read speed, high density, low power, non-destructive readout, random access and high endurance compared with existing mainstream flash memories. Large memory window (MW) and robust device reliability in terms of endurance and retention time are the key requirements for FeFETs in practical NVM applications. Ferroelectric materials, channel materials, gate electrode materials and seed layers can significantly affect the memory performance of FeFETs. Therefore, this article critically reviews the memory performance FeFETs over the last 50 years, various FeFET architectures, the role of 2D-materials in FeFETs, emergence of organic materials for the development of organic FeFETs, role of oxides as channel materials, advancements in fabrication process and reliability concerns and emerging applications of FeFETs.