Artificial Interfacial Quasi‐Electric Field: A Pathway to Promote Ga 2 O 3 Photodetectors

Abstract At the current stage, as a rising material star for the past two decades, represented wide bandgap semiconductor gallium oxide (Ga 2 O 3 ) and its devices have earned inspiring progresses, and come to a turning point between the preceding and the following. Ga 2 O 3 has extensively been used to construct solar‐blind deep UV photodetectors, display advantages of high accuracy, low background noise, and extended usages, etc. Other than the photoconductive detectors, the band offsets at the hetero/homo‐interfaces in a semiconductor‐semiconductor junctions contribute to artificial interfacial quasi‐electric field for modulating the carrier transports, and then the device operation. Such a phenomenon would lead to many novel and desired physical functionalities. In this review article, the progresses and advantages of the artificial interfacial field will be discussed from a viewpoint of device physics in detail, to explore its key role in modulating the photophysical behaviors in Ga 2 O 3 ‐based junction‐based photodetectors. Especially, this review will outline the improved strategies of dark current, photo response, response speed, photodetection bandwidth, junction classification, calling for more efforts to unleash the huge potential of Ga 2 O 3 ‐based artificial interfacial quasi‐electric field.