Ge Nanodots Organization on Si Substrates Patterned by ECL Method

Self-assembled Ge nanodots were grown on pre-patterned Si substrates by chemical vapor deposition.The pre-patterned Si substrates were fabricated by the electrochemical lithography(ECL) method.The surface morphology obtained by atomic force microscopy shows that the size and distribution of the Ge nanodots grown at 500 ℃ are strongly relevant with the pre-patterned Si nanodots on substrates.The average size of the Ge nanodots is about 35 nm and the dot density is about 5×1010 cm-2.The impact of the Si nanodots on the growth of Ge nanodots becomes insignificant at lower and higher deposition temperature.