偶极子
平面的
电介质
材料科学
极化(电化学)
电磁辐射
雷达截面
球体
分子物理学
光电子学
局部对称性
辐射
凝聚态物理
超材料
辐射传输
电荷密度
散射
微波食品加热
电子结构
光学
涂层
金属
物理
表面电荷
计算物理学
吸收截面
等离子体子
吸收(声学)
圆对称性
介电响应
表面等离子体子
反射(计算机编程)
电磁学
电磁场
载流子
光子学
作者
Daohu Sheng,Siyao Cheng,Mu Zhang,Jinglei Zhang,Xufei Zhu,Weijin Li,Bo Zhang,Aming Xie
摘要
ABSTRACT The dielectric response of carbon‐based single‐atom (SA) absorbers is intrinsically constrained by the highly symmetric charge distribution of planar M‐N 4 coordination motifs, which suppresses dipole polarization and limits electromagnetic wave (EMW) attenuation. Here, a nanocurvature‐driven symmetry‐breaking strategy is proposed to activate latent dielectric polarization at SA sites through geometric regulation. By combining click chemistry with template‐assisted synthesis, metal SAs are anchored onto hollow nitrogen‐doped carbon spheres with precisely tunable diameters, enabling systematic modulation of local nanocurvature. Theoretical calculations and experimental analyses reveal that curvature‐induced surface charge accumulation disrupts the electronic symmetry at Ni‐N 4 centers, markedly enhancing local charge density, dipole moments, and polarizability. Consequently, the optimized Ni/HNC‐200 absorber achieves an ultralow minimum reflection loss of −74.1 dB, representing a staggering 390% enhancement over HNC‐200 (−15.1 dB), and exhibits a reduced radar cross section of −70.49 dB m 2 . A flexible electronic patch further demonstrates over fivefold suppression of electric‐field radiation from mobile phone chips. The universality of this mechanism is validated in Co‐ and Cu‐based systems, establishing nanocurvature as a geometry‐enabled design paradigm for high‐performance SAs EMW absorbers.
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