记忆电阻器
磁滞
离子通道
物理
信号(编程语言)
频道(广播)
离子
电子工程
光电子学
材料科学
电气工程
计算机科学
工程类
化学
凝聚态物理
量子力学
生物化学
受体
程序设计语言
作者
Maheshwar Pd. Sah,Hyongsuk Kim,Leon O. Chua
出处
期刊:IEEE Circuits and Systems Magazine
[Institute of Electrical and Electronics Engineers]
日期:2014-01-01
卷期号:14 (1): 12-36
被引量:205
标识
DOI:10.1109/mcas.2013.2296414
摘要
This exposition shows that the potassium ion-channels and the sodium ion-channels that are distributed over the entire length of the axons of our neurons are in fact locally-active memristors. In particular, they exhibit all of the fingerprints of memristors, including the characteristic pinched hysteresis Lissajous figures in the voltage-current plane, whose loop areas shrink as the frequency of the periodic excitation signal increases. Moreover, the pinched hysteresis loops for the potassium ion-channel memristor, and the sodium ion-channel memristor, from the Hodgkin-Huxley axon circuit model are unique for each periodic excitation signal. An in-depth circuit-theoretic analysis and characterizations of these two classic biological memristors are presented via their small-signal memristive equivalent circuits, their frequency response, and their Nyquist plots. Just as the Hodgkin-Huxley circuit model has stood the test of time, its constituent potassium ion-channel and sodium ion-channel memristors are destined to be classic examples of locally-active memristors in future textbooks on circuit theory and bio-physics.
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