半金属
几何相位
物理
拓扑(电路)
凝聚态物理
磁电阻
费米子
迪拉克费米子
直线(几何图形)
带隙
磁场
量子力学
几何学
数学
组合数学
作者
Junran Zhang,Ming Gao,Jinglei Zhang,Xuefeng Wang,Xiaoqian Zhang,Minhao Zhang,Wei Niu,Rong Zhang,Yongbing Xu
标识
DOI:10.1007/s11467-017-0705-7
摘要
Topological nodal-line semimetal is a new emerging material, which is viewed as a three-dimensional (3D) analog of graphene with the conduction and valence bands crossing at Dirac nodes, resulting in a range of exotic transport properties. Herein, we report on the direct quantum transport evidence of the 3D topological nodal-line semimetal phase of ZrSiS with angular-dependent magnetoresistance (MR) and the combined de Hass-van Alphen (dHvA) and Shubnikov-de Hass (SdH) oscillations. Through fitting by a two-band model, the MR results demonstrate high topological nodal-line fermion densities of approximately 6 × 1021 cm−3 and a perfect electron/hole compensation ratio of 0.94, which is consistent with the semi-classical expression fitting of Hall conductance G xy and the theoretical calculation. Both the SdH and dHvA oscillations provide clear evidence of 3D topological nodal-line semimetal characteristic.
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