制作
砷化镓
材料科学
支柱
光电子学
终端(电信)
太阳能电池
金属
选矿厂
联轴节(管道)
接口(物质)
格子(音乐)
拓扑(电路)
光学
电气工程
物理
计算机科学
电信
工程类
病理
复合材料
冶金
毛细管作用
替代医学
医学
结构工程
毛细管数
声学
作者
Chieh‐Ting Lin,William E. McMahon,Jas S. Ward,John F. Geisz,M. W. Wanlass,Jeffrey J. Carapella,Waldo Olavarria,Emmett E. Perl,Michelle Young,Myles A. Steiner,Ryan M. France,A. Kibbler,A. Duda,T. Moriarty,Daniel J. Friedman,John E. Bowers
摘要
Abstract A novel bonding approach with an interface consisting of a metal and dielectric is developed, and a “pillar‐array” metal topology is proposed for minimal optical and electrical loss at the interface. This enables a fully lattice‐matched two‐terminal, four‐junction device that consists of an inverted top two‐junction (2J) cell with 1.85 eV GaInP/1.42 eV GaAs, and an upright lower 2J cell with ~1 eV GaInAsP/0.74 eV GaInAs aimed for concentrator applications. The fabrication process and simulation of the metal topology are discussed along with the results of GaAs/GaInAs 2J and (GaInP + GaAs)/GaInAs three‐junction bonded cells. Bonding‐related issues are also addressed along with optical coupling across the bonding interface. Copyright © 2014 John Wiley & Sons, Ltd.
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