Enhanced energy-storage density and temperature stability of Pb0.89La0.06Sr0.05(Zr0.95Ti0.05)O3 anti-ferroelectric thin film capacitor

As the fundamental energy storage components in electronic systems, dielectric capacitors with high power densities were demanded. In this work, the anti-ferroelectric Pb0.89La0.06Sr0.05(Zr0.95Ti0.05)O3 (PLSZT) ceramics and thin film capacitor were successfully fabricated by a solid-state reaction route and pulsed laser deposition method, respectively. The ferroelectric, dielectric, energy-storage properties, and temperature stability of anti-ferroelectric PLSZT capacitor were investigated in detail. By compared with the PLSZT ceramic (energy storage density is 1.29 J/cm3 with an efficiency of 78.7% under 75 kV/cm), the anti-ferroelectric PLSZT thin film capacitors exhibited the enhanced energy storage density of 52.6 J/cm3 with efficiency of 67.7% under an electric field as high as 2068.9 kV/cm, and the enhanced energy-storage temperature stabilities from room temperature (RT) to more than 200 °C were demonstrated, and the oxygen defects mechanism and size effect were discussed. Moreover, the fast charging (∼0.05 μs) and discharging (∼0.15 μs) time were certified for the anti-ferroelectric PLSZT film capacitor. These findings broaden the horizon for PLSZT anti-ferroelectrics in high energy storage properties and show promising for manufacturing pulse power capacitor.