光电探测器
光电二极管
光电子学
放大器
材料科学
砷化镓
光子学
磷化铟
光学
物理
CMOS芯片
作者
Igor Yunusov,A. V. Kondratenko,V. S. Arykov,Mikhail Stepanenko,P. E. Troyan
出处
期刊:Prikladnaâ fizika
[Joint-Stock Company Scientific and Production Association - ORION]
日期:2021-12-24
卷期号: (6): 41-46
标识
DOI:10.51368/1996-0948-2021-6-41-46
摘要
The paper presents development results for a photodetector module with an integrated lownoise amplifier. The photodetector is based on a commercial indium-phosphide photodiode and a custom-designed adapter board and allows to use an optical carrier with wavelengths of 1.31 and 1.55 μm and performs optoelectronic conversion for electrical signals into 0–50 GHz range. The developed gallium arsenide low-noise amplifier is used to compensate photodiode conversion loss in the X-band frequency range. The photodetector module is intended for use as a microwave photonic link receiver, which provides a significant extension of the signal transmission range in comparison with classical types of transmission lines
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