通量
沟槽
辐照
跟踪(教育)
硅
材料科学
像素
探测器
光学
光电子学
分辨率(逻辑)
能量(信号处理)
梁(结构)
图像分辨率
物理
计算机科学
核物理学
纳米技术
人工智能
心理学
教育学
图层(电子)
量子力学
作者
A. Lampis,F. Borgato,D. Brundu,A. Cardini,Gian Matteo Cossu,G.‐F. Dalla Betta,M. Garau,L. La Delfa,A. Lai,A. Loi,Maria Margherita Obertino,G. Simi,S. Vecchi
标识
DOI:10.1088/1748-0221/18/01/c01051
摘要
Abstract In this paper the results of a beam test characterization campaign of 3D trench silicon pixel sensors are presented. A time resolution in the order of 10 ps was measured both for non-irradiated and irradiated sensors up to a fluence of 2.5 × 10 16 1 MeV n eq cm −2 . This feature and a detection efficiency close to 99% make this sensors one of the best candidates for 4D tracking detectors in High-Energy-Physics experiments.
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