Wafer-Level InP to Si and LiNbO3 Covalent Bonding via Asymmetric Plasma Activation Strategy

An asymmetric plasma activation strategy was developed for targeted activation towards dissimilar materials. By using the appropriate plasma gases, a balance is achieved between surface functionalization and subsurface regulation to avoid damage formation. Therefore, the defect-free InP/Si and InP/LiNbO3 interfaces were constructed at low annealing temperatures for hybrid integrated quantum systems.