Symmetry Engineering in a 2D Transition Metal Enables Reconfigurable P- and N-Type FETs

Two-dimensional (2D) transition metals enable the elimination of metal-induced gap states and Fermi-level pinning in field-effect transistors (FETs), offering an advantage over conventional metal contacts. However, transition metal substrates typically exhibit nonoriented behaviors, leading to the inability to achieve monolingual responses with P- or N-type semiconductors. Here we devise symmetry engineering in an oxidized architectural MXene, termed OXene, which implements the exploiting and coupling of additional out-of-plane electron conduction and built-in polar structures. OXene combines oriented inhibitory and excitatory characteristics to achieve reconfigurable FET substrates, leveraging the modulation carrier dynamics at the metal–semiconductor interface. By coupling OXene with MXene, we achieve complementary semiconductor responses that introduce an additional dimension of programmability in logic configurations.