响应度
材料科学
基质(水族馆)
暗电流
量子效率
光电子学
位错
硅
偏压
电流密度
光电探测器
电压
电气工程
复合材料
物理
工程类
量子力学
地质学
海洋学
作者
Guosheng Wang,Z. J. Ke,Ming Yao,Qian Dai,Ruiyu Yang,Xiaoqing Pan,Xiumin Xie
摘要
InGaAs-based p-i-n Photo-Detectors (PDs) on misoriented Si and conventional Si substrates are both designed, fabricated, and characterized. It is found that the as-grown PD structure on misoriented Si substrate has lower dislocation density than on conventional Si substrate. The PD fabricated on misoriented Si substrate shows a low dark-current of 83nA under −5 V, a zero bias voltage responsivity of 0.58 A/W at 1550 nm, the corresponding quantum efficiency is 46%. The dark-current and quantum efficiency at 1550 nm, of the PD on misoriented Si substrate, is about over one orders of magnitude lower and 70% higher respectively, than the comparison PD fabricated on conventional Si substrate.
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