Dynamic Charge Imbalance in Superjunction IGBTs: Design, Simulation, and Experimental Validation

To explore the potential of silicon Insulated Gate Bipolar Transistors (IGBTs), we conducted the design, simulation, and experimental validation of the 1.2 kV-class Superjunction (SJ) IGBTs for the first time. The SJ structure has been optimized to balance between bipolar conduction loss and ultra-fast switching capabilities, while withstanding a reverse breakdown voltage of 1.2 kV. Furthermore, our research has revealed the unique dynamic charge imbalance effect associated with SJ-IGBTs, which affects characteristics such as surge voltage $(V_{\mathrm{s}\mathrm{u}\mathrm{r}\mathrm{g}\mathrm{e}})$ and turn-off energy loss $(E_{\mathrm{o}\mathrm{f}\mathrm{f}})$ .