半金属
铂金
电子结构
价(化学)
锡
费米能级
电子能带结构
态密度
带隙
化学
晶体结构
凝聚态物理
导带
铂族
半导体
价带
金属
材料科学
计算化学
结晶学
物理
光电子学
生物化学
催化作用
有机化学
量子力学
电子
作者
Guang‐Yu Guo,Wenyao Liang
标识
DOI:10.1088/0022-3719/19/7/011
摘要
The band structures and density of states functions of platinum dichalcogenides, calculated using the LMTO-ASA method in conjunction with muffin-tin potentials, are reported for the first time. The results predict that PtS2 is a semiconductor with an energy gap of about 1.2 eV, PtSe2 is a semimetal with a slight indirect overlap of the conduction and valence bands, the PtTe2 is a metal with a complex Fermi surface. The electronic structures of these compounds are found to be substantially different from those of group IVb, Vb, and VIb TMDC having the same crystal structure. The results are discussed in terms of atomic orbital binding energies and the local coordination of the constituent atoms. The band structures obtained are generally in good agreement with the available experimental measurements.
科研通智能强力驱动
Strongly Powered by AbleSci AI