EUV chemically amplified resist component distribution and efficiency for stochastic defect control

In this work, we connected the analytical determination of the EUV Dill C parameter for different photodecomposable base quencher (PDB) architectures using a standard addition method, the influence of the underlying hardmask on postdevelop EUV resist residue formation, and the vertical PAG and PDB concentration profile throughout the depth of the film determined by GCIB-TOF-SIMS for a model EUV resist system. The collected experimental data was used to feed a resist patterning simulation engine, in order to understand the additive effect of component distribution and efficiency on EUV stochastics and its potential impact on defect control. Our results unveiled a link between PDB quantum yield and nanoscopic material distribution uniformity. In parallel, a differentiating behavior was observed among inorganic underlayers: metal oxide hardmasks (HMs) invariably induced more resist residue than non-metallic HMs. Last, a specific example of joint PAG and PDB concentration depletion at the resist-substrate interface was related to a potential increase in microbridge defectivity as a result of poor stochastic counts.