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Nitrogen-doped CVD diamond: Nitrogen concentration, color and internal stress

纳米团簇 钻石 拉曼光谱 分析化学(期刊) 材料科学 空位缺陷 吸收光谱法 化学 光学 结晶学 纳米技术 复合材料 物理 色谱法
作者
A.M. Zaitsev,N.M. Kazuchits,V.N. Kazuchits,Kyaw Soe Moe,M.S. Rusetsky,O.V. Korolik,Kouki Kitajima,J. E. Butler,Wen‐Jwu Wang
出处
期刊:Diamond and Related Materials [Elsevier BV]
卷期号:105: 107794-107794 被引量:32
标识
DOI:10.1016/j.diamond.2020.107794
摘要

Single crystal CVD diamond has been grown on (100)-oriented CVD diamond seed in six layers to a total thickness of 4.3 mm, each layer being grown in gas with increasing concentration of nitrogen. The nitrogen doping efficiency, distribution of color and internal stress have been studied by SIMS, optical absorption, Raman spectroscopy and birefringence imaging. It is shown that nitrogen doping is very non-uniform. This non-uniformity is explained by the terraced growth of CVD diamond. The color of the nitrogen-doped diamond is grayish-brown with color intensity gradually increasing with nitrogen concentration. The absorption spectra are analyzed in terms of two continua representing brown and gray color components. The brown absorption continuum exponentially rises towards short wavelength. Its intensity correlates with the concentration of nitrogen C-defects. Small vacancy clusters are discussed as the defects responsible for the brown absorption continuum. The gray absorption continuum has weak and almost linear spectral dependence through the near infrared and visible spectral range. It is ascribed to carbon nanoclusters which may form in plasma and get trapped into growing diamond. It is suggested that Mie light scattering on the carbon nanoclusters substantially contributes to the gray absorption continuum and determines its weak spectral dependence. A Raman line at a wavenumber of 1550 cm−1 is described as a characteristic feature of the carbon nanoclusters. The striation pattern of brown/gray color follows the pattern of anomalous birefringence suggesting that the vacancy clusters and carbon inclusions are the main cause of internal stress in CVD diamond. A conclusion is made that high perfection of seed surface at microscale is not a required condition for growth of low-stress, low-inclusion single crystal CVD diamond. Crystallographic order at macroscale is more important requirement for the seed surface.

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