Thermal management of a semiconductor laser array based on a graphite heat sink

Thermal analysis of a semiconductor laser array is carried out by establishing a packaging structure model of the array based on the use of copper as the base heat sink. A novel composite heat sink structure for a high-power semiconductor laser array with copper-implanted graphite microholes is proposed. The relationship between the location and quantity of microholes and the junction temperature of the semiconductor laser array is analyzed by numerical simulation. The packaging structure is found to effectively reduce the temperature generated by the semiconductor laser array in the process of operation, and the highest temperature is reduced by 4.52 K. Since the laser diode bar is composed of multiple emitters, the temperature of the intermediate emitters is higher than that of the edge emitters. The structure of the graphite heat sink is optimized to improve the temperature uniformity of the semiconductor laser array emitter. Without changing the parameters of the semiconductor laser array device, the temperature difference is calculated, and a reduction from 7.68 to 2 K is shown.