正电子
正电子湮没谱学
多普勒展宽
碲化镉光电
光谱学
晶体缺陷
俘获
结合能
原子物理学
空位缺陷
材料科学
正电子寿命谱学
正电子湮没
物理
分子物理学
凝聚态物理
谱线
核物理学
电子
光电子学
生物
量子力学
生态学
天文
作者
Mohamed R. El-Sharkawy,G. S. Kanda,E.E. Abdel‐Hady,D. J. Keeble
摘要
Positron lifetime measurements on CdTe 0.15% Zn-doped by weight are presented, trapping to monovacancy defects is observed. At low temperatures, localization at shallow binding energy positron traps dominates. To aid defect identification density functional theory, calculated positron lifetimes and momentum distributions are obtained using relaxed geometry configurations of the monovacancy defects and the Te antisite. These calculations provide evidence that combined positron lifetime and coincidence Doppler spectroscopy measurements have the capability to identify neutral or negative charge states of the monovacancies, the Te antisite, A-centers, and divacancy defects in CdTe.
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