星团(航天器)
电离能
电子结构
密度泛函理论
原子物理学
幻数(化学)
磁矩
从头算
电子亲和性(数据页)
费米能级
结合能
电子
电离
材料科学
物理
凝聚态物理
分子
离子
量子力学
计算机科学
程序设计语言
作者
Hao Jing-An,Haoping Zheng
出处
期刊:Chinese Physics
[Science Press]
日期:2004-01-01
卷期号:53 (4): 1044-1044
被引量:15
摘要
The first principle, all-electron, ab initio calculations have been performed for cluster Ga6N6, based on the density functional theory. Ten possible structures and related electronic structures are obtained. For the most stable structure, the mean binding energy of a pair atoms of GaN is 9.748 eV, so the structure may exist. Compared with the results of clusters Ga3N3 and Ga5N5 calculated by other people, however, the cluster Ga6N6 may not be the “magic number” cluster. The Fermi level of cluster Ga6N6 in the most stable structure is partly occupied with EF=-5.2972 eV, which means “metallicity”. The cluster Ga6N6 has no spin magnetic moment. The electron affinity, ionization energy, and transition energies of cluster Ga6N6 are also calculated. This work should be helpful to the complete study of structures and properties of clusters GanNn.
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