超导电性
等结构
反铁磁性
自旋电子学
凝聚态物理
材料科学
兴奋剂
化学计量学
单晶
通量法
纳米技术
焊剂(冶金)
工作(物理)
梅斯纳效应
磁电阻
领域(数学)
量子
化学气相沉积
量子化学
结晶学
原子力显微镜
掺杂剂
光电子学
作者
Jia Han,Jin Wang,Chuanyi Wu,Chen Chen,Munisa Nurmamat,Baojuan Kang,Shixun Cao,Jincang Zhang,Fei Chen
标识
DOI:10.1021/acs.cgd.5c01147
摘要
In recent years, intercalated transition-metal dichalcogenide (ITMD) Fe1/3NbS2 single crystals have attracted significant research attention as a platform for investigating antiferromagnetic (AFM) spintronics. However, its isostructural counterpart Fe1/3NbSe2 has rarely been reported. The primary challenge lies in the difficulty of growing high-concentration FexNbSe2 (x > 0.3) single crystals via the chemical vapor transport (CVT) method, where the actual x is no more than 0.25. This limitation has significantly hindered research on heavily Fe-intercalated NbSe2 systems. Here, we developed an innovative approach using Fe(Te,Se) as a flux to grow high-concentration Fe-intercalated NbSe2 single crystals. By systematically tuning the Te/Se stoichiometric ratio in the starting materials, we identified the optimal crystal-growth condition at Te:Se = 0.6:0.4. This method successfully achieves simultaneous growth of two distinct single crystals, AFM Fe0.35NbSe2 with trace Te doping and superconducting Fe(Te,Se). This work establishes a new pathway for investigating AFM spintronic devices and superconducting quantum materials, while also providing valuable references for growing other high-concentration ITMD single crystals.
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