超导电性
GSM演进的增强数据速率
材料科学
凝聚态物理
物理
电信
计算机科学
作者
Chuanhao Wen,Zhiyong Hou,Zhiyuan Shang,Huan Yang,Hai-Hu Wen
标识
DOI:10.1088/0256-307x/42/8/080707
摘要
Abstract By measuring scanning tunneling spectroscopy on some large Bi islands deposited on FeTe 0.55 Se 0.45 superconductors, we observe clear in-gap edge states with double peaks at about ±1.0 meV on the spectra measured near the perimeter of the islands. This feature is very different from the single zero-energy peak observed on some other small Bi islands. The edge states spread towards the inner side of the islands over a width of 2–3 nm. The two edge-state peaks at positive and negative energies move to higher values with the increase of the magnetic field, and they disappear near the transition temperature of FeTe 0.55 Se 0.45 . Meanwhile, enhanced superconducting gaps are observed in the central regions of these Bi islands, which may be induced by the enhanced pair potential of the topological surface state. Our observations provide a valuable message for the edge state and the proximity-induced superconductivity on specific Bi islands grown on FeTe 0.55 Se 0.45 substrate.
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