High Performance of Monolithically Integrated GaN Micro‐LED With p‐MOSFET: Advancing Toward Active Matrix Micro‐LED Displays

Abstract The monolithic integration of a blue GaN Micro‐LED with voltage‐controlled p ‐channel metal‐oxide‐semiconductor field effect transistor ( p ‐MOSFET) is demonstrated using a commercial GaN LED epitaxial wafer. By adjusting the gate voltage, the p ‐MOSFET effectively regulates the injection current of the 5‐µm Micro‐LED, enabling precise modulation of its output characteristics. With the MOSFET gate‐source voltage set to V gs = −25 V, the integrated device achieves peak LED performance, with light output power (LOP), external quantum efficiency (EQE), and luminance of 163 W cm −2 , 14.9%, and 3.2 m nits, respectively‐remarkably close to the performance of a standalone Micro‐LED. This work represents a significant milestone toward active matrix Micro‐LED displays based on monolithic integration, where each subpixel requires 2 transistors (one n ‐type and one p ‐type) and one capacitor.