钙钛矿(结构)
二极管
材料科学
光电子学
发光二极管
图层(电子)
绿灯
工程物理
纳米技术
化学工程
工程类
蓝光
作者
Gwang-Il Kim,Yurim Mo,Hyejin Na,Seon Joo Lee,Sungho Choi,Hyosung Choi,Jaemin Lee
标识
DOI:10.1109/led.2024.3387982
摘要
Improving hole injection/transport and achieving charge balance through a multilayer hole-transporting layer (HTL) structure is a key technology for enhancing the performance of perovskite light-emitting diodes (PeLEDs). However, the stacking of a multilayer HTL through a solution process is constrained by the issue of erosion. We propose the use of 1,2-dichloroethane (DCE) as an orthogonal solvent for PTAA HTL, and a triple-layer HTL of [PTAA/TFB/PVK] was successfully realized solely through a solution-process. With an increase in the number of HTLs, there was an observed rise in external quantum efficiency (EQE) and a simultaneous reduction in turn-on voltage (V on ) of the PeLED devices, attributed to a gradual decrease in the hole-injection barrier. In addition to the HTL, the integration of a double-layer electron-transporting layer (ETL) of [TPBi/PO-T2T] further enhanced overall device performance, resulting in a maximum EQE over 12 % and a V on as low as 2.22 V. The source of this enhancement was also investigated through time-resolved photoluminescence analysis and single-carrier device characterizations.
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