材料科学
光电子学
击穿电压
氮化镓
二极管
宽禁带半导体
电介质
氮化物
功勋
电场
电压
电气工程
图层(电子)
纳米技术
物理
量子力学
工程类
作者
Y. Xu,Vijay Gopal Thirupakuzi Vangipuram,Vishank Talesara,Junao Cheng,Yuxuan Zhang,Tadao Hashimoto,Edward Letts,Daryl Key,Hongping Zhao,Wu Lu
摘要
Devices based on gallium nitride (GaN) have great potential for high power switching applications due to the high breakdown field and high electron mobility. In this work, we present a vertical GaN-on-GaN PN power diode using high dielectric constant material, BaTiO3, for electrical field management and high breakdown voltages, in together with an optimized guard-ring and field plate design. Numerical simulation shows that with high-k dielectrics implemented, the peak electrical field at the PN interface is mitigated from 3.5 to 3.1 MV/cm under a reverse bias of −9.05 kV. The device design with BaTiO3 shows a breakdown voltage of 9.65 kV or about 600 V improvement. The fabricated diodes with a 57 μm thick drift layer demonstrate a breakdown voltage of 7.86 kV on a bulk GaN substrate. The device has an on-resistance of 2.8 mΩ cm2 and a Baliga figure of merit of 22 GW/cm2.
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