空位缺陷
过电位
材料科学
二硫化钼
硫黄
催化作用
塔菲尔方程
硫系化合物
化学工程
化学物理
纳米技术
结晶学
光电子学
冶金
电化学
物理化学
化学
有机化学
电极
工程类
作者
Ping Man,Shan Jiang,Ka‐Ho Leung,Ka Hei Lai,Zhiqiang Guang,Honglin Chen,Lingli Huang,Tianren Chen,Shan Gao,Yung‐Kang Peng,Chun‐Sing Lee,Qingming Deng,Jiong Zhao,Thuc Hue Ly
标识
DOI:10.1002/adma.202304808
摘要
Abstract Emerging non‐noble metal 2D catalysts, such as molybdenum disulfide (MoS 2 ), hold great promise in hydrogen evolution reactions. The sulfur vacancy is recognized as a key defect type that can activate the inert basal plane to improve the catalytic performance. Unfortunately, the method of introducing sulfur vacancies is limited and requires costly post‐treatment processes. Here, a novel salt‐assisted chemical vapor deposition (CVD) method is demonstrated for synthesizing ultrahigh‐density vacancy‐rich 2H‐MoS 2 , with a controllable sulfur vacancy density of up to 3.35 × 10 14 cm −2 . This approach involves a pre‐sprayed potassium chloridepromoter on the growth substrate. The generation of such defects is closely related to ion adsorption in the growth process, the unstable MoS 2 ‐K‐H 2 O triggers the formation of sulfur vacancies during the subsequent transfer process, and it is more controllable and nondestructive when compared to traditional post‐treatment methods. The vacancy‐rich monolayer MoS 2 exhibits exceptional catalytic activity based on the microcell measurements, with an overpotential of ≈158.8 mV (100 mA cm −2 ) and a Tafel slope of 54.3 mV dec −1 in 0.5 m H 2 SO 4 electrolyte. These results indicate a promising opportunity for modulating sulfur vacancy defects in MoS 2 using salt‐assisted CVD growth. This approach represents a significant leap toward achieving better control over the catalytic performances of 2D materials.
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