Experimental Investigation of a Novel 750V SJ-RET-IGBTs (Superjunction Recessed Emitter Trench IGBTs) for the Automotive Application

The soaring demand for electric vehicles has made it evident that the Insulated Gate Bipolar Transistor (IGBT), a crucial component, needs to evolve. To minimize switching loss, we need to focus on optimizing the front-side design and enhancing the drift region. Introducing finely patterned super junctions to replace the flat concentration drift region allows us to take traditional IGBTs to new heights, and the results are remarkable. In this work, using 8-inch wafer mass fabrication with the fine pattern cell and super junction structure, we can enhance switching performance by up to 30% while keeping the equal conduction loss, maintaining high ruggedness, and a broad safe operating area.