兴奋剂
材料科学
开路电压
掺杂剂
太阳能电池
光电子学
光致发光
短路
电压
电气工程
工程类
作者
Tomohiro ITO,Takahito Nishimura,Jakapan Chantana,Abdurashid Mavlonov,Yu Kawano,Takayuki Negami,Takashi Minemoto
标识
DOI:10.1002/pssr.202300050
摘要
Herein, the usefulness of silver (Ag)‐doping into Cu 2 (Sn,Ge)S 3 (CTGS) solar cells is demonstrated. From an observation via a field emission scanning electron microscope, grain growth promotion of the CTGS thin films by Ag‐doping is revealed. It is found that undesirable defects are suppressed by an adequate Ag‐dopant amount, resulting in reduced nonradiative recombination in photoluminescence spectra for the Ag‐doped CTGS films. For the CTGS solar cell devices, Ag‐doping into the CTGS absorbers mainly improves the short‐circuit current density and open‐circuit voltage. Finally, 3.2%‐efficient Ag‐doped CTGS solar cell is obtained at [Ag]/([Ag] + [Cu]) ratio of 0.05. It is believed that these findings will help to realize the highest efficiency for the CTGS solar cells.
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