Facile construction of g-C3N4/MnWO4/NiS heterostructures for photocatalytic degradation of organic contaminates under visible light irradiation

Assembling of a new ternary heterojunction (g-C3N4/MnWO4/NiS) is reported here. As a result, the g-C3N4/MnWO4/NiS exhibited numerous benefits, such as outstanding visible light absorption, high carrier separation, and therefore, boosted photodegradation performance (96.7% of methylene blue, MB) compared to g-C3N4, and MnWO4. The contact region between g-C3N4 and MnWO4 efficiently accomplishes rapid separation of charge carriers through NiS cocatalyst, creating binding sites between g-C3N4 and MnWO4 semiconductors. The mechanisms for the photocatalytic degradation over the g-C3N4/MnWO4/NiS heterostructure are suggested and verified.