硒化物
量子点
光致发光
镓
铟
材料科学
蓝移
壳体(结构)
三元运算
红移
带隙
芯(光纤)
半导体
光电子学
物理
天体物理学
硒
银河系
计算机科学
冶金
复合材料
程序设计语言
作者
Navapat Krobkrong,Taro Uematsu,Tsukasa TORIMOTO,Susumu Kuwabata
标识
DOI:10.35848/1347-4065/acd895
摘要
Abstract Here, silver indium sulfide (AgInS 2 )/gallium selenide core/shell quantum dots (QDs) were developed to exhibit red band-edge emission. Previously, we developed AgInS 2 /gallium sulfide core/shell QDs, which exhibited yellow band-edge photoluminescence (PL). Upon the gallium selenide shell growth, the PL spectra redshifted by more than 100 nm owing to an indirect transition between the core and shell (called the type-II characteristic). After the posttreatment with HCl, the PL wavelength was further redshifted by the formation of Ag–In–S–Se alloyed cores with a narrow bandgap, and the PL intensity increased because of the formation of a quasi-type-II band alignment. In addition, the PL wavelength could be tuned between deep-red and yellow by varying the S/(S + Se) ratio in the Ga–S–Se ternary shells. Based on the long lifetime of the QDs with the alloyed shells, it was suggested that the electronic structure of these alloyed shell QDs is the full type II.
科研通智能强力驱动
Strongly Powered by AbleSci AI