Salt‐Assisted Low‐Temperature Growth of 2D Bi2O2Se with Controlled Thickness for Electronics

Bi₂ O₂ Se is the most promising 2D material due to its semiconducting feature and high mobility, making it propitious channel material for high-performance electronics that demands highly crystalline Bi₂ O₂ Se at low-growth temperature. Here, a low-temperature salt-assisted chemical vapor deposition approach for growing single-domain Bi₂ O₂ Se on a millimeter scale with thicknesses of multilayer to monolayer is presented. Because of the advantage of thickness-dependent growth, systematical scrutiny of layer-dependent Raman spectroscopy of Bi₂ O₂ Se from monolayer to bulk is investigated, revealing a redshift of the A_1g mode at 162.4 cm^-1 . Moreover, the long-term environmental stability of ≈2.4 nm thick Bi₂ O₂ Se is confirmed after exposing the sample for 1.5 years to air. The backgated field effect transistor (FET) based on a few-layered Bi₂ O₂ Se flake represents decent carrier mobility (≈287 cm² V^-1 s^-1 ) and an ON/OFF ratio of up to 10⁷ . This report indicates a technique to grow large-domain thickness controlled Bi₂ O₂ Se single crystals for electronics.