光电探测器
可见光通信
光电子学
材料科学
光通信
发光二极管
计算机科学
光学
电子工程
物理
工程类
作者
Jiakang Ai,Zhen Zhang,Tianlin Deng,Daqi Shen,Yang Xiao,Zuxin Jin,Tianyang Ren,Xugao Cui,Pengfei Tian
标识
DOI:10.1109/jlt.2025.3568082
摘要
In this paper, we developed a photodetector (PD) array based on red GaN micro-LEDs, where the n-GaN layers are electrically isolated from one another. We analyzed the factors affecting the transmittance of GaN micro-LED based PD when used as semi-transparent detector, examined the transmittance of different regions within the GaN micro-LED based PD, and proposed solutions to enhance overall transmittance. Additionally, we studied the gap between the absorption and electroluminescence (EL) spectra of the GaN micro-LED based PD, highlighting its benefits for future multifunctional application integration. Based on our research, we investigated its potential application in high-speed communication and multi-user secure communication based on semi-transparent PD. Furthermore, a record data rate of 15.64 Gbps was achieved based on the single GaN micro-LED based PD by employing an OFDM modulation scheme and a bit-loading algorithm with a 0.3 m transmission distance in free space. Finally, we employed our GaN micro-LED based PD as semi-transparent detector, and constructed a multiple user access system for secure communication, achieving a maximum data rate of 6.84 Gbps in all users.
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