钙钛矿(结构)
二极管
材料科学
电致发光
光致发光
异质结
光电子学
量子效率
薄膜
发光二极管
量子产额
卤化物
化学工程
化学
图层(电子)
纳米技术
无机化学
光学
物理
工程类
荧光
作者
Liang Sun,Xiping He,Zhiyuan He,Feihu Zhang,Chencheng Peng,Ben Chen,Runda Guo,Lei Wang
标识
DOI:10.1007/s12200-025-00152-8
摘要
Abstract Metal halide perovskites have become one of the most competitive new-generation optoelectronic materials due to their excellent optoelectronic properties. Vacuum evaporation can produce high-purity and large-area films, leading to the wide application of this method in the semiconductor industry and optoelectronics field. However, the electroluminescent performance of vacuum-evaporated perovskite light-emitting diodes (PeLEDs) still lags behind those counterparts fabricated by solution methods. Herein, based on vacuum evaporation, 3D perovskite films are obtained by three-source co-evaporation. Considering the unique quantum well structure of quasi-2D perovskite can significantly enhance the exciton binding energy and improve the radiative recombination rate, leading to a high photoluminescence quantum yield (PLQY). Subsequently, the highly stable and low-defect-density quasi-2D perovskite is introduced into 3D perovskite films through post-treatment with phenethylammonium chloride (PEACl). To minimize the degradation of film quality caused by PEACl treatment, a layer of guanidinium bromide (GABr) is vacuum evaporated on top of PEACl treatment to further improve the quality of emitting layer. Finally, under the synergistic post-processing modification of PEACl and GABr, blue PeLEDs with a maximum external quantum efficiency (EQE) of 6.09% and a maximum brightness of 1325 cd/m 2 are successfully obtained. This work deepens the understanding of 2D/3D heterojunctions and provides a new approach to construct PeLEDs with high performance. Graphical abstract
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