1.43 kV GaN-based MIS Schottky barrier diodes

Abstract In this letter, we report on a quasi–vertical GaN-based metal–insulator–semiconductor (MIS) Schottky barrier diode (SBD) with an insertion of 2 nm thick Al 2 O 3 dielectric layer. It shows a turn-on voltage of 0.7 V, a specific on-resistance of 3.5 mΩ·cm 2 , and a high on/off current ratio of 10 11 . The proposed structure enables a breakdown voltage of 1430 V, rendering a Baliga’s power figure-of-merit of 0.58 GW cm −2 . The enhanced performance is attributed to defect-related leakage can be suppressed and the direct tunneling process dominates at the MIS-based Schottky contact interface.