锌黄锡矿
悬空债券
钝化
材料科学
光伏
纳米技术
太阳能电池
光电子学
光伏系统
硅
捷克先令
图层(电子)
电气工程
工程类
作者
Lixin Cao,Lijing Wang,Zhengji Zhou,Tianxiang Zhou,Rui Li,Hao Zhang,Zhiteng Wang,Sixin Wu,Adel Najar,Qingwen Tian,Shengzhong Liu
标识
DOI:10.1002/adma.202311918
摘要
Abstract Surfaces display discontinuities in the kesterite‐based polycrystalline films can produce large defect densities, including strained and dangling bonds. These physical defects tend to introduce electronic defects and surface states, which can greatly promote nonradiative recombination of electron–hole pairs and damage device performance. Here, an effective chelation strategy is reported to suppress these harmful physical defects related to unterminated Cu, Zn, and Sn sites by modifying the surface of Cu 2 ZnSn(S,Se) 4 (CZTSSe) films with sodium diethyldithiocarbamate (NaDDTC). The conjoint theoretical calculations and experimental results reveal that the NaDDTC molecules can be coordinate to surface metal sites of CZTSSe films via robust bidentate chelating interactions, effectively reducing surface undercoordinated defects and passivating the electron trap states. Consequently, the solar cell efficiency of the NaDDTC‐treated device is increased to as high as 13.77% under 100 mW cm −2 illumination, with significant improvement in fill factor and open‐circuit voltage. This surface chelation strategy provides strong surface termination and defect passivation for further development and application of kesterite‐based photovoltaics.
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