Improving the open circuit voltage of MAPbI2Br by Sb doping for achieving high efficient solar cells

The films of antimony-doped methylammonium lead iodide bromide (Sb-MAPbI2Br) have been deposited on FTO-glass substrates. XRD analysis reveals that doping has increased grain size and has no effect on the cubic crystal structure of MAPbI2Br. Sb-doping reduced the band gap energy (2.04 eV) and increased the refractive index (2.61). Additionally, according to the EIS result of the comparable cell, device with 4 % Sb doping has a lower recombination rate than pure MAPbI2Br-based solar cells. The cell fabricated with Sb doping showed a high open-circuit voltage (1.001 V), a sizable short-circuit current density (9.61 mA/cm2), fill factor (0.79), and a high efficiency (7.7 %). The strong open-circuit voltage seen here supports the possibility of stacked MAPbI2Br for the creation of highly effective solar cells.