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Tuning the stability and optoelectronic properties of SnTe/Sb van der Waals heterostructure by biaxial strain effect

材料科学 异质结 密度泛函理论 带隙 单层 凝聚态物理 范德瓦尔斯力 拉伤 直接和间接带隙 光电子学 纳米技术 计算化学 物理 化学 内科学 医学 量子力学 分子
作者
Isam Allaoui,A. Benyoussef,A. El Kenz,Mohamed Khuili
出处
期刊:Modern Physics Letters B [World Scientific]
卷期号:37 (22) 被引量:6
标识
DOI:10.1142/s0217984923500665
摘要

Using density functional theory (DFT), we have investigated the structural, stability, and electronic properties of the isolated antimonene, SnTe monolayers, and the structural, stability, and optoelectronic properties of the SnTe/Sb vdW heterostructure. The results show that the atoms in these monolayers have strong cohesion and that the SnTe/Sb vdW heterostructure is stable. The indirect bandgap energies are calculated to be 1.17[Formula: see text]eV (PBE) (2.28[Formula: see text]eV (HSE)), 1.89[Formula: see text]eV (PBE) (2.93[Formula: see text]eV (HSE)), and 0.32[Formula: see text]eV (PBE) (0.89[Formula: see text]eV (HSE)), respectively. However, these physical properties can be modulated by applying biaxial strain, when the compressive and tensile biaxial strain reached more than 4%, the heterostructure turned into metal, and the electronic bandgap decreased as the tensile and compressive biaxial strain increased from 0 to 8%. The phonon dispersion exhibits imaginary modes, notably above the 6% compressive strain, exhibiting its dynamic instability. The formation energy is negative under all biaxial strain, indicating that the heterostructure is still relatively stable during biaxial strain. An enhancement of optical absorption is observed, especially near the UV-visible regions, when the biaxial strain is incorporated, especially for compressive strains of 4% and 2%, which increases the absorption capacity. Therefore, the application of the biaxial strain can improve the stability, optical, and electronic properties of the SnTe/Sb vdW heterostructure, suggesting its potential for photovoltaic and optoelectronic applications.
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