P‐1.4: Synergistic Enhancement of Stability and Mobility in ZrO2‐Doped ITZO TFTs with MLO Passivation

To completely improve the stability of ZnO‐based thin‐film transistors (TFTs), we propose a comprehensive optimization strategy for ITZO TFTs. We perform ZrO 2 doping of the active layer and organic passivation of the back‐channel surfaces of ITZO TFTs with bottom‐gate top contact. The combination of a multifunctional laminated organic passivation layer and a ZrO 2 ‐doped active layer enables ITZO TFTs to provide improved electrical and optical stress stability and excellent thermal stress stability. The results show that ZrO 2 ‐doped ITZO TFTs have a wider effective application temperature range and maintain excellent transistor characteristics compared to undoped devices. It also exhibits excellent reliability in terms of negative bias gate stress testing, which cannot be improved by back‐channel surface passivation.