A dry development process for vertically tailored hybrid multilayer EUV photoresist: chemical vapor development (CVD)

In this study, the development of a dry process for vertically tailored hybrid multilayer EUV photoresists using hexafluoroacetylacetone (HFAA) as a chemical vapor developer is investigated. Unexposed regions of the resist were effectively removed, resulting in well-defined patterns, as confirmed by AFM and XPS analyses. The consistent line thickness was maintained, and high development selectivity was demonstrated. The patterned resist was successfully transferred onto a SiO2 substrate. Future research will be focused on optimizing both the dry development and etching conditions to further enhance the precision and applicability of this technique for next-generation lithography.