Silicon Carbide Thin Films: Innovations in Property, Process, and Applications

A systematic assessment is presented of the evolution and ongoing innovations for the silicon carbide (SiC) material system, focusing on emerging material and process technologies for thin films. To ensure an appropriate context for the drive to generate SiC thin films for a wide range of applications, we begin by tabulating the properties of the SiC material platform according to the corresponding primary structures. This is followed by recent results including both cumulative advances in established SiC applications as well significant developments in novel and potential SiC applications. Attention is directed to Si and C source chemistries, especially single source SiC precursors; novel nanoscale process intensification methodologies, and the corresponding effects on film properties and performance. Additionally, research and development efforts in which SiC materials are projected to play an enabling role in the introduction of new technological applications are discussed.