DEPOSITION OF PtxIr(1–x) FILM STRUCTURES BY MOCVD FROM A COMBINATION OF PRECURSORS Me3Pt(acac)Py AND Ir(CO)2(acac)

MOCVD processes of the deposition of PtxIr(1–x) films in the presence of H2 and O2 in the temperature range 260-300 °C on Si and Ti substrates using a combination of precursors Me3Pt(acac)Py and Ir(CO)2(acac) (acac = acetylacetonato(-), Py = pyridine) are studied. According to the powder XRD data, the films are usually solid solutions with the PtxIr(1–x) composition. The samples prepared in the presence of O2 show the minimal contents of impurities, homogeneous composition, and the Pt:Ir ratio close to the one experimentally specified. In the presence of H2, Ir-enriched PtxIr(1–x) layers with a non-uniform distribution of metals over the thickness are formed in the temperature range 280-300 °C. The surface of PtxIr(1–x) film structures prepared in the presence of hydrogen is formed by small (up to 10 nm in size) particles or 20-32 nm large particle agglomerates prepared in the presence of oxygen. The PtxIr(1–x) layers have a predominantly columnar structure. The structure of films deposited in an oxygen atmosphere is less dense than that of the layers synthesized under similar conditions in a hydrogen atmosphere. The thickness of the films prepared in H2 or O2 falls within intervals 300-450 nm and 750-800 nm, respectively.