光电探测器
材料科学
响应度
异质结
光电子学
薄脆饼
化学气相沉积
比探测率
范德瓦尔斯力
剥脱关节
紫外线
纳米技术
石墨烯
分子
有机化学
化学
作者
Jinjin Hei,Xue Li,Shuo‐En Wu,Pei Lin,Zhifeng Shi,Yongtao Tian,Xin Jian Li,Longhui Zeng,Xuechao Yu,Di Wu
标识
DOI:10.1021/acsami.2c22409
摘要
Two-dimensional (2D) transition-metal dichalcogenides (TMDs) exhibit promising potential in fabricating highly sensitive photodetectors due to their unique electrical and optoelectrical characteristics. However, micron-sized 2D materials produced by conventional chemical vapor deposition (CVD) and mechanical exfoliation methods fail to satisfy the demands for applications in integrated optoelectronics and systems given their poor controllability and repeatability. Here, we propose a simple selenization approach to grow wafer-scale (2 in.) 2D p-WSe2 layers with high uniformity and customized patterns. Furthermore, a self-driven broadband photodetector with a p-WSe2/n-Si van der Waals heterojunction has been in situ fabricated with a satisfactory responsivity of 689.8 mA/W and a large specific detectivity of 1.59 × 1013 Jones covering from ultraviolet to short-wave infrared. In addition, a remarkable nanosecond response speed has been recorded under 0.5% duty cycle of the input light. The proposed selenization approach on the growth of 2D WSe2 layers demonstrates an effective route to fabricate highly sensitive broadband photodetectors used for integrated optoelectronic systems.
科研通智能强力驱动
Strongly Powered by AbleSci AI